منابع مشابه
Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates
In the fabrication of microstructures in SiO2 , etch selectivity of SiO2 to masking, etch stop, and underlayer materials need to be maintained at corners and inclined surfaces. The angular dependence of the SiO2-to-Si3N4 etch selectivity mechanism in a high density fluorocarbon plasma has been studied using V-groove structures. The SiO2 etch rate on 54.7° inclined surfaces is lower than on flat...
متن کاملSurface etching, chemical modification and characterization of silicon nitride and silicon oxide--selective functionalization of Si3N4 and SiO2.
The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon di...
متن کاملChemical etching of nitinol stents.
At present the main cause of death originates from cardiovascular diseases. Primarily the most frequent cause is vessel closing thus resulting in tissue damage. The stent can help to avoid this. It expands the narrowed vessel section and allows free blood flow. The good surface quality of stents is important. It also must have adequate mechanical characteristics or else it can be damaged which ...
متن کاملInstabilities of a Thermo - Mechano - Chemical System
A Hadamard instability analysis of the partial differential equations governing a coupled thermo-mechano-chemical system predicts instability of the spinoidal decomposition type as well as instability of the "negative creep" type.
متن کاملWet-Chemical Etching and Cleaning of Silicon
A Introduction Research and manufacturing related to silicon devices, circuits, and systems often relies on the wet-chemical etching of silicon wafers. The dissolution of silicon using liquid solutions is needed for deep etching and micromachining, shaping, and cleaning. Also, wet-chemistries are often used for defect delineation in single crystal silicon materials. In this paper, a review of t...
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ژورنال
عنوان ژورنال: Journal of the Japan Society for Precision Engineering
سال: 1988
ISSN: 1882-675X,0912-0289
DOI: 10.2493/jjspe.54.96